Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1814948 | Physica B: Condensed Matter | 2007 | 4 Pages |
Abstract
A nitrogen-related pair defect is studied as a function of doping density in 4H and 6H SiC. Electron paramagnetic resonance measurements verify that one nucleus in the pair is nitrogen, but the second part of the pair remains uncertain. The pair concentration varies monotonically with nitrogen concentration in samples with doping density 1018-1016Â cmâ3 and the boron concentration is an order of magnitude less than that of nitrogen. The pair center is not observed in the dark or under ultraviolet illumination when the nitrogen and boron concentrations are similar. We conclude that the pair is generated in all nitrogen-doped samples, but like the isolated nitrogen impurity, may be compensated by boron.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M.E. Zvanut, J. van Tol,