Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1814961 | Physica B: Condensed Matter | 2007 | 4 Pages |
Abstract
FTIR absorption measurements have been carried out on shallow donor transitions in silicon related to (N, O)-complexes. Growth of a nitrogen-doped float-zone ingot with an axial variation of the interstitial oxygen concentration from <1016 up to 6Ã1017Â cmâ3 allowed systematic investigation of the defect formation driven by mass-action laws. The energetically deepest shallow donor of the (N, O)-family has the composition NO. Other species contain up to three oxygen atoms. Implications of the results on the microscopic structure of (N, O)-related shallow donors are discussed.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H.Ch. Alt, H.E. Wagner, W.v. Ammon, F. Bittersberger, A. Huber, L. Koester,