Effects of annealing on the electrical properties of highly resistive float zone p-type silicon

This paper reports effects of heat treatment in nitrogen or forming gas ambient on the electrical properties of highly resistive float zone p-type silicon (Si). Capacitance–voltage and Hall Effect measurements were used to examine role of impurities associated with annealing. A reduction in the free carrier density was observed for both the nitrogen and forming gas anneals. In addition, temperature-dependent capacitance measurements revealed the appearance of deep traps with a concentration of 2×1011 cm−3, following the nitrogen anneal.