| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1814986 | Physica B: Condensed Matter | 2007 | 4 Pages |
Abstract
Dynamics of photoexcited carriers in Er-doped GaAs (GaAs:Er) and Er,O-codoped GaAs (GaAs:Er,O) have been systematically investigated by means of a pump and probe technique. A characteristic ps-scale relaxation was clearly observed in transient reflectance (dR/R) and transmission (dT/T) curves. The relaxation was due to the trapping of photoexcited carriers by an Er-related trap, which was closely related to efficiency of Er3+ luminescence.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y. Fujiwara, S. Takemoto, K. Nakamura, K. Shimada, M. Suzuki, K. Hidaka, Y. Terai, M. Tonouchi,