Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1814992 | Physica B: Condensed Matter | 2007 | 4 Pages |
Abstract
Manganese (Mn) acceptors are well known to form complexes with hydrogen (H) in InP and GaAs crystals. However, to our knowledge, the formation of such complexes in GaP has not been reported yet. The difficulty in formation of Mn-H complexes in GaP can be explained by unfavorable mutual positions of H and Mn energy levels in GaP band structure. A series of GaP samples intentionally doped with Mn and some of them co-doped with zinc (Zn) and containing also unintentional H and carbon (C) has been investigated. In very slightly p-type samples, a local vibration mode at 2369.4Â cmâ1 at 6Â K was found, which we ascribed to Mn-H complexes by comparison of energy positions corresponding to analogical “Mn-H” complexes in other semiconductors. In more strongly p-type samples, these complexes were not found but Zn-H and C-H complexes were present.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
B. Clerjaud, D. Wasik, R. Bouanani-Rahbi, G. Strzelecka, A. Hruban, M. Piersa, M. KamiÅska,