Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1815005 | Physica B: Condensed Matter | 2007 | 4 Pages |
Abstract
Radiation-produced defects in doped and nominally undoped n-GaN with charge carrier concentrations in a range of 4Ã1016 cmâ3 to about 2Ã1018 cmâ3 are investigated. Layers of n-GaN are irradiated with fast electrons at 0.9 MeV, 60Co gamma rays and protons at 150 keV. The production rates of radiation defects in n-GaN are estimated and compared with literature data. Annealing processes of radiation defects in n-GaN in the temperature range 100-700 °C are also discussed. The annealing behavior appears to be complicated. Two temperature intervals, from T=100 to 400 °C and from T=500 to 700 °C, are characteristic for modification and annealing processes of radiation-produced defects in n-GaN.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
V.V. Emtsev, V.Yu. Davydov, V.V. Kozlovskii, G.A. Oganesyan, D.S. Poloskin, A.N. Smirnov, E.A. Tropp, Yu.G. Morozov,