Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1815012 | Physica B: Condensed Matter | 2007 | 4 Pages |
Abstract
The local vibrational modes (LVMs) observed by Fourier transform infrared (FTIR) spectroscopy in GaAsN films grown by chemical beam epitaxy (CBE) was studied, and the influence of the nitrogen-hydrogen bond (N-H) concentration on the hole concentration was investigated. The absorption peak around 936Â cmâ1 is suggested to be the second harmonic mode of the substitutional N, NAs, LVM around 469Â cmâ1. The absorption peak around 960Â cmâ1 is suggested to be the wagging mode of the N-H, where the stretch mode is observed around 3098Â cmâ1. The hole concentration linearly increases with increasing N-H concentration, and the slope increases with increasing growth temperature. It indicates that the hole concentration in GaAsN film is determined by both the number of the N-H and unknown defect, such as impurities, vacancies, and interstitials. This defect concentration increases with increasing growth temperature, suggesting that it is determined by Arrhenius type reaction.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
K. Nishimura, H. Suzuki, K. Saito, Y. Ohshita, N. Kojima, M. Yamaguchi,