Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1815023 | Physica B: Condensed Matter | 2007 | 5 Pages |
Abstract
LEDs based on the n-ZnO/p-GaN heterojunction were successfully fabricated with the top/middle/bottom layer sequence of ZnO/ZnO nanorods/p-GaN by continuously controlling the growth parameters via metal organic chemical vapor deposition. The ZnO top layer was deposited as a contact layer for the application of nanorods as an active layer, while p-GaN was used as a p-type layer, instead of p-ZnO. The ZnO film grown on ZnO nanorods with high crystalline quality on GaN exhibited the epitaxial properties of a single domain. The light-emitting device fabricated using this hybrid structure demonstrated a forward turn-on voltage of 11 V and a high reverse current, which require further development for device fabrication.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Dong Chan Kim, Won Suk Han, Bo Hyun Kong, Hyung Koun Cho, Chang Hee Hong,