Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1815418 | Physica B: Condensed Matter | 2009 | 5 Pages |
Abstract
Temperature dependent current–voltage (I–V)(I–V) and Hall measurements were performed on Pd/ZnO Schottky barrier diodes in the range 20–300 K. The apparent Richardson constant was found to be 8.60×10-9AK-2cm-2 in the 60–160 K temperature range, and mean barrier height of 0.50 eV in the 180–300 K temperature range. After barrier height inhomogeneities correction, the Richardson constant and the mean barrier height were obtained as 167AK-2cm-2 and 0.61 eV in the temperature range 80–180 K, respectively. A defect level with energy at 0.12 eV below the conduction band was observed using the saturation current plot and (0.11±0.01)eV using deep level transient spectroscopy measurements.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
W. Mtangi, F.D. Auret, C. Nyamhere, P.J. Janse van Rensburg, M. Diale, A. Chawanda,