| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1815440 | Physica B: Condensed Matter | 2009 | 4 Pages |
Abstract
We investigated the temperature-dependent and excitation power-dependent photoluminescence spectra of Mn-implanted (Ga,Mn)N samples with five Mn-implantation doses. The near-band-energy emission was observed and was attributed to the Mn-related exciton transition, which exhibits localized exciton behaviour resulting from alloy potential fluctuations and demonstrates a special temperature-dependence characteristic of alloy disorder. In terms of the integrated photoluminescence intensity as a function of temperature, the activation energy of the localized exciton was obtained. All these results show strong dependence on the Mn concentration of (Ga,Mn)N epilayers.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
X.Y. Meng, Y.H. Zhang, W.Z. Shen,