| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1815450 | Physica B: Condensed Matter | 2009 | 8 Pages |
Abstract
I have investigated the behavior of the electric field gradient (EFG) at M site in ThM3 compounds (with M=Sn, In, Si, Ge, Ga, Rh, Pb, Tl) under pressure. I have found that the magnitude of EFG increases with pressure in all compounds. Furthermore I have shown that in ThM3 (with M=In, Ga, Pb, Tl), this increase follows a common trend. Thereby I have reached an equation of state for the EFG in this group.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Z. Nourbakhsh,