| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1815663 | Physica B: Condensed Matter | 2009 | 4 Pages |
Abstract
The magnetization process of Co/Si/Co/GaAs was studied as a function of Si-spacer layer thickness. Coercivity of Co/Si decreased with increasing Si-spacer layer thickness.The Hysteresis loop changed from two phases to a single phase with decreasing temperature and Si-spacer layer thickness. Magnetoresistance (MR) ratio in current-perpendicular-to-plane (CPP) configuration increased with decreasing Si-spacer layer thickness.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J. Islam, Y. Yamamoto, E. Shikoh, A. Fujiwara, H. Hori,