The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method

Al/methyl red/p-Si Schottky barrier diodes (SBD) have been fabricated by adding a solution of the non-polymeric organic compound methyl red in chloroform on top of p-Si substrates, and then evaporating the solvent. The electronic and interface state density distribution properties were obtained from the current–voltage (I–V) and the capacitance–voltage (C–V) characteristics (high and low frequency) of Al/methyl red/p-Si SBD at room temperature. The energy distribution of the interface state density located in the inorganic semiconductor band gap at the organic compound/inorganic semiconductor interface in the energy range from (0.675-Ev) eV to (0.783-Ev) eV has been determined. In addition, the interface state density NssNss range from 6.12×1013 cm−2 eV−1 in (0.675-Ev) eV to 4.31×1012 cm−2 eV−1 in (0.783−Ev) eV. The interface state density has an exponential rise with bias from the mid-gap towards the top of the valence band.