| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1816037 | Physica B: Condensed Matter | 2007 | 4 Pages |
The current–voltage characteristics of Zinc (II) [(8-hydroxyquinoline)(1,10-phenanthroline)] complex (Zn(phen)q)/p-type Si/Al diode with interfacial layer have been investigated. The barrier height and ideality factor of the diode were found to be 0.71 eV and 2.05. Zn(phen)q/p-type Si/Al diode shows a metal–insulator–semiconductor structure resulted from presence of series resistance and an interfacial layer. The n and φB values obtained the presence of interfacial layer are 1.02 and 0.70 eV, respectively. The effect of series resistance was evaluated using a method developed by Cheung. The Rs and n values were determined from the d ln(I)/dV plot and were found to be 30.43 kΩ and 2.16, respectively. The barrier height and Rs values were calculated from the H(I)–I plot and were found to be 0.70 eV and 30.99 kΩ. The density of the interface states of the Zn(phen)q/p-type Si/Al diode was calculated and was found to be an order of 1013 eV−1 cm−2.
