Mechanism of manganese (mono and di) telluride thin-film formation and properties

Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO4 and TeO2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn2+, Te4+ and combined Mn2+ and Te4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.