Article ID Journal Published Year Pages File Type
1816162 Physica B: Condensed Matter 2006 6 Pages PDF
Abstract
The main mechanisms of the generation of the equilibrium fluctuations of the electron mobility in homogeneous and non-degenerate semiconductors are studied. It is proven that the mobility fluctuations are related to energy fluctuations and are conditioned by random non-elastic scattering and generation-recombination processes. In particular, it is shown that the mobility fluctuations come into existence as a result of random electron-phonon and phonon-phonon scattering processes. The case of acoustic phonon-phonon scattering is considered in detail. The spectral density of the electron lattice mobility fluctuations is calculated on the base of a new phonon mechanism. It is shown that the noise spectrum over a broad frequency range has a 1/f form. The theoretical results for many samples agree with experimental data.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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