Manganese as a fast charge carrier trapping center in InP

Significant influence of Mn centers on the radiative and nonradiative recombinations in Czochralski-grown InP:Mn crystals was observed. Time-resolved measurements showed that manganese recombination centers caused very fast, probably subpicosecond, decay of holes and excitons. This recombination was explained by the capture of holes on an excited state of the Mn acceptor. The holes trapping coefficient RMn determined on the order of 10−5 cm3/s provided an estimation of the Mn cross-section for hole capture σp of the order of 10−12 cm2. Electrical transport measurements showed that hopping conductivity dominated at low temperatures. From analysis of the hopping, the wavefunction radius of Mn-bound hole af=0.74±0.1nm was calculated. A model explaining the values of af is presented.