Effect of V+5 doping on Structural and Dielectric properties of SrBi2Nb2O9 Synthesized at low Temperature

In this article, we report on successful preparation of single phase doped SrBi2Nb2O9 (SBN) ceramics at lower synthesis temperature and a systematic study on effect of partial substitution of Nb+5 (B-site) by V+5 on the lattice constants, microstructure, dielectric, and electrical properties of SBN ferroelectric ceramics. The dielectric and electrical characterization of Vanadium (V+5) doped SBN ceramics have been made in the frequency range of 100 Hz–1 MHz and in the temperature range 400–500 °C. Vanadium doped SBN ceramics have been found to exhibit strong low frequency dielectric dispersion in 100  Hz–100 KHz frequency range at various temperatures. Substituting Nb+5 by much smaller V+5 cation resulted in an increased “rattling space” leading to a higher curie temperature.