Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1816202 | Physica B: Condensed Matter | 2006 | 8 Pages |
Abstract
There is a practical interest in developing semiconductors with levels situated within their band gap while preventing the non-radiative recombination that these levels promote. In this paper, the physical causes of this non-radiative recombination are analyzed and the increase in the density of the impurities responsible for the mid-gap levels to the point of forming bands is suggested as the means of suppressing the recombination. Simple models supporting this recommendation and helping in its quantification are presented.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Antonio Luque, Antonio Martí, Elisa Antolín, César Tablero,