Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1816389 | Physica B: Condensed Matter | 2007 | 5 Pages |
Abstract
Indium (â¼10Â at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300Â K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10Â at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44Â sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity â¼3.40Ã10â8Â ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07Â eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Subrahmanyam, Ullash Kumar Barik,