Study of the electric properties of BiFe1−xZrxO3+δ films prepared by the sol–gel process

BiFe1−xZrxO3+δ (BFZO) films were deposited on indium tin oxide (ITO)/glass substrates by sol–gel process and randomly oriented BFZO films with x=0–0.40 were obtained. We studied the effects of Zr substitution on structural, ferroelectric, dielectric and leakage conduction properties in BFZO system. R3 m structure was observed for all films, and pyrochlore phase began to occur for the film with x=0.20. Enhanced ferroelectric property was observed at room temperature because of the substitution of Zr for the films with x=0.05–0.20. The largest remnant polarization of 2.9 μC/cm2 was acquired in the film with x=0.20. Furthermore, it is observed that the dielectric constant was enhanced by the substitution of Zr. The film with x  =0.10 has the largest dielectric constant at the same frequency. The leakage conduction was not reduced with the increase of Ti when x<0.20x<0.20 and was substantially reduced when x>0.10.