Effect of Ag additive on the photoelectric and dielectric properties of Se–Te alloys

The present paper reports photoelectric and dielectric studies in glassy Se80−xTe20Agx (x=5, 10, 15) alloys. The results show anomalous behavior of transient photoconductivity in the present glassy system. However, temperature and frequency dependence of dielectric constant is normal as observed in other chalcogenide glasses. The results observed for transient photoconductivity are explained in terms of interaction between Ag+ ions and photoexcited holes. The results observed for dielectric constant are explained in terms of dipolar type relaxation due to the formation of dipoles of Ag+ ions and D− defects.