| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1816398 | Physica B: Condensed Matter | 2007 | 5 Pages |
Abstract
We demonstrate semiconductor-metal transition through diamagnetic susceptibility of a donor in a GaAs/AlxGa1âxAs quantum well for both infinite and finite barrier models. We have also considered the non-parabolicity of the conduction band in our calculation. Our results agree with the earlier theoretical result and also with the recent experimental result.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
P. Nithiananthi, K. Jayakumar,