Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1816655 | Physica B: Condensed Matter | 2006 | 4 Pages |
Abstract
The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 10B to 11B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
N. Fukata, S. Fukuda, S. Sato, K. Ishioka, M. Kitajima, S. Hishita, K. Murakami,