Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1816674 | Physica B: Condensed Matter | 2006 | 4 Pages |
Abstract
We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Cloud Nyamhere, P.N.K. Deenapanray, F.D. Auret, F.C. Farlow,