Isochronal annealing studies of carbon-related defects in irradiated Si

We report infrared spectroscopy studies of defects in neutron-irradiated, carbon-doped, Cz-grown silicon. At room temperature irradiations, among the main defects formed are the CiCs and CiOi complexes. A peak in the spectra at 544 cm−1 was found to be the contribution of two bands at 543.5 and 545.5 cm−1. From the corresponding annealing behavior of these bands, the 543.5 cm−1 band was correlated with the CiCs defect although the 544.5 cm−1 band with the CiOi defect. At high-irradiation doses, complexes as the Ci(SiI) (953,960cm-1), CiOi(SiI)(934,1018cm-1), CiCs(SiI)(987,993cm-1) and CsCs(527cm-1) form. Isochronal anneals performed in order to study the thermal evolution of these centers, showed that the Ci(SiI) and CiOi(SiI) begin to decay in the spectra around 150 °C. Their disappearance is not accompanied by the emergence of any signal. The CiCs and the CiCs(SiI) centers begin to decay around ∼250∘C. Their disappearance is accompanied by the emergence of two pairs of bands at (918,1006cm-1) and (945,964cm-1), respectively. The origin of the centers, giving rise to these bands is discussed.