Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures

Radiation-produced defects in heavily doped n-Si with charge carriers concentrations n⩾3×1018cm-3 are investigated. The results obtained in these radiation experiments provided evidence that most Frenkel pairs produced after 2.5 MeV electron irradiation at T=4.2K are present in irradiated materials but they are not seen in electrical measurements. At room temperature a majority of Frenkel pairs produced are separated into the constituent defects forming impurity-related complexes. Two prominent stages of defect annealing are observed at temperatures above T=300K. Complete recovery of the concentration and mobility of charge carriers in irradiated materials takes place around T=800K.