Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1816680 | Physica B: Condensed Matter | 2006 | 4 Pages |
Abstract
Infrared absorption of float-zone-refined silicon crystals implanted with protons and annealed at 450 °C has been investigated in the range 150-1800 cmâ1. Along with the presence of well-known prominent bands related to higher-order electronic transitions of intrinsic defects at 700-1200 cmâ1 and wagging vibrations of Si-H bonds in 600-800 cmâ1 range, four effective-mass-like donors with binding energies in the range 32.6-38.7 meV and dominating sharp absorption peaks at 309, 373 and 444 cmâ1 were observed. The dominant sharp peaks as well as a broad band in the spectral region 200-1800 cmâ1 with the maximum at â¼450 cmâ1 demonstrate bistable behavior and arise from hydrogen-related non-effective-mass-like shallow donors.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S.Zh. Tokmoldin, A.T. Issova, Kh.A. Abdullin, B.N. Mukashev,