Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1816688 | Physica B: Condensed Matter | 2006 | 4 Pages |
Abstract
Denuded zone (DZ) formed by rapid thermal process (RTP) followed with the low-high (Lo-Hi) annealing in nitrogen-doped Czochralski (NCZ) silicon wafer was studied in this paper. In comparison with the conventional CZ silicon, the DZ in NCZ silicon was a little narrower, while the bulk microdefects were much denser, as a result of nitrogen-enhanced oxygen precipitation. It was also found that DZs within CZ and NCZ silicon wafers shrunk notably when further subjected to rigorous oxygen precipitation annealing, however, a width of substantial DZ remained within either wafer. Furthermore, it is definitely proved that the nitrogen doping does not affect the formation of defect-free DZ by the RTP-based internal gettering (IG) process.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Can Cui, Deren Yang, Xiangyang Ma, Ruixin Fan, Liben Li, Duanlin Que,