Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation

6H n-type silicon carbide (SiC) samples were irradiated with electrons having energies of 0.2, 0.3, 0.5 and 1.7 MeV and photoluminescence measurements were conducted to study the defects created. The so-called alphabet line (EA)(EA) spectrum was created by electron irradiation with electron energy Ee⩾0.3MeV. By considering the energy required to displace the C atom and the Si atom in the lattice, the creation of these lines by electron irradiation is associated with the C atom displacement. The process of the introduction of DIDI by annealing was studied and was found to be different for the 0.3 and the 1.7 MeV electron-irradiated sample. Formation mechanisms for the EAEA and the DIDI related centers were discussed.