Muonium states and dynamics in 4H and 6H silicon carbide

Two isotropic Mu0 centers are found in 4H Silicon Carbide (SiC) and a total of four Mu0 states are seen in the 6H-SiC polytype. We report the temperature dependence of hyperfine constants, signal amplitudes, and relaxation rates for three Mu0 centers in p-type 6H-SiC from spin precession data at 6 T. Low-field results for the diamagnetic fraction imply two ionization steps with energies of 0.21 and 0.88 eV. Additional dynamics seen in several different SiC samples are discussed; however, specific assignments of site or charge-state transitions are not yet certain.