Shallow donors in the triple-graded quantum well under the hydrostatic pressure and external fields

The binding energy of the donor in the triple-graded GaAs-(Ga,Al)As quantum well under the hydrostatic pressure, electric and magnetic fields are calculated by using a variational approach. The results have been obtained in the presence of hydrostatic pressure, magnetic and electric fields applied along the growth direction as a function of the impurity position without consideration of a mass mismatch or dielectric mismatch.