Characteristics of heterojunctions of amorphous LaAlO2.73 on Si

High-quality heterojunctions consisting of n-type amorphous LaAlO3−δ and p-type Si without Si interfacial layer were prepared using a thin film deposition system normally used for laser-molecular beam epitaxy. Good I–V rectifying property, ferroelectricity of interface enhancement and fast photovoltaic effect have been observed in the LaAlO3−δ/Si p–n heterojunctions. We expect that the multifunctional properties of rectification, ferroelectricity and photovoltaic effect should open up new possibilities in device development and other applications.