The effect of BZO doping concentration and thickness dependent properties of YBCO films grown by PLD on buffered NiW substrates

The effect of BaZrO3 (BZO) doping is systematically studied in YBa2Cu3O6+x (YBCO) thin films deposited by pulsed laser deposition (PLD) on buffered NiW substrates. Based on the structural and magnetic properties, the optimal BZO doping concentration is obtained to vary between 4 and 7.5 wt.%, depending mainly on applied magnetic field. This relatively high optimal concentration is linked to the nanograined target material and metal substrate that cause low-angle grain-boundaries and in-plane spread of YBCO crystals on NiW. Thickness dependent analysis of undoped and BZO-doped YBCO films predicts differences in growth mechanisms where early growth next to the substrate interface is 2D-type in BZO-doped films. This leads to the situation where crystallographic structure as well as superconducting properties are improved when the film develops and the thickness is increased. Therefore from the resistivity measurements a threshold thicknesses where reasonable properties occur are determined for both set of films. Measurements in thermally activated flux-flow regime (TAFF) indicate that above the threshold thickness relatively strong and isotropic vortex pinning is realized in BZO-doped YBCO films. Generally, this paper demonstrates that especially for thin film applications on NiW substrates even more compatible buffer layer structures should be utilized.

► The influence of BZO dopant content on structural and SC properties is investigated. ► Optimal BZO content in different magnetic field ranges are defined. ► Thickness dependent analysis in TAFF regime is carried out. ► For thin layers on NiW, the buffer layer structure has a crucial role.