Stoichiometric transfer of material in the infrared pulsed laser deposition of yttrium doped Bi-2212 films

Films of Y-doped Bi-2212 were successfully grown on MgO (1 0 0) substrates by infrared pulsed laser deposition (IR-PLD). With post-heat treatments, smooth and highly c-axis oriented films were obtained. The average compositions of the films have the same stoichiometry as the target. Y content is also preserved on the grown films at all doping levels. The electrical properties of the grown Y-doped Bi-2212 films exhibit the expected electrical properties of the bulk Y-doped Bi-2212. This is attributed to the stoichiometric transfer of material by IR-PLD.

► This work describes the stoichiometric transfer of Y-doped Bi-2212 during IR-PLD. ► As-deposited films show spheroidal morphology with similar composition as the target. Relatively flat and highly c-axis oriented films were obtained after heat treatment. ► IR-PLD can be a viable technique in growing other high Tc superconducting materials.