Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1819113 | Physica C: Superconductivity and its Applications | 2009 | 8 Pages |
Abstract
Hall effect and magnetoresistance ÎÏ/Ï(0) (MR) in the normal state have been measured on single crystals of Ba1âxKxFe2As2 and NdFeAsO1âxFx. Detailed analysis reveal the following conclusions: (1) For the parent phases of Ba1âxKx Fe2As2 and NdFeAsO1âxFx, large Hall effect and MR with strong temperature dependence were observed below a characteristic temperature corresponding to the antiferromagnetic/ structural transition. The field dependence of the Hall resistivity Ïxy exhibits a non-linear behavior, which is accompanied by the violation of the B-square feature of the longitudinal magnetoresistivity ÎÏxx(B)/Ïxx(0). A closer inspection further indicates that they are well related to each other and could be attributed to the multi-band effect or spin-related scattering. (2) The superconducting samples show much smaller Hall coefficient and MR in the normal state. The Hall coefficient shows a weaker temperature dependence compared to the parent phase, while the mean scattering rate 1/ÏH has a power-law like temperature dependence as 1/ÏH â Tn (n = 2-3). (3) For a Ba1âxKxFe2 As2 sample with Tc = 36 K, the field dependence of MR is complicated and the feature varies in different temperature regions. A drastic change of ÎÏ/Ï(0) was found between 80 K and 100 K, which corresponds very well to the maximum of the temperature derivative of the resistivity. This may be attributed to the spin-related scattering of electrons. (4) A comparison between the parent phase and the superconducting sample with Tc = 50 K in NdFeAsO1âxFx suggests that the electronic transport properties in the normal state cannot be easily understood with the simple multi-band model, while a picture concerning a suppression to the quasiparticle density of states at the Fermi energy is more reasonable.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H.Q. Luo, P. Cheng, Z.S. Wang, H. Yang, Y. Jia, L. Fang, C. Ren, L. Shan, H.H. Wen,