Superconducting Nd1.85Ce0.15CuO4 films grown by the pulsed electron deposition technique

Nd1.85Ce0.15CuO4−δ superconducting thin films were prepared on (1 0 0) SrTiO3 substrates by pulsed electron deposition technique without reducing atmosphere. Oxygen content is finely controlled by high temperature vacuum annealing, and optimal superconductivity has been obtained. The deposition conditions of the film are discussed in details. Higher deposition temperature and lower gas pressure result in the loss of copper and the appearance of the foreign phase Ce0.5Nd0.5O1.75. High quality Nd1.85Ce0.15CuO4−δ epitaxial films are deposited at 840–870 °C in the mixed gas with a ratio of O2:Ar = 1:3.