Out-of-plane tilted Josephson junctions of bi-epitaxial YBa2Cu3Ox thin films on tilted-axes NdGaO3 substrates with CeO2 seeding layer

Bi-epitaxial heterostructures YBa2Cu3Ox(YBCO)/CeO2/NdGaO3 were prepared on tilted-axes NdGaO3 substrates using laser ablation technique. The heterostructures were patterned for electrical measurements using photolithography and ion-beam milling. Electrical anisotropy of the YBCO film was tested on the ion-beam etched surface. Bi-epitaxial junctions with four different orientations of the bi-epitaxial border were fabricated and studied. The measured I V curves showed flux-flow behavior with critical current density 2.5 × 104 A/cm2 for the twist-type junctions and 1.5 × 103 A/cm2 for [1 0 0]-tilt type junctions.