Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1823037 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2013 | 4 Pages |
Abstract
We performed high-energy proton and electron irradiation on a GaN Schottky diode and investigated the effects on its electrical properties. No significant changes in the dark current or breakdown voltage of the diode were observed for fluences up to ∼1014protons/cm2. The currents increased by a factor of ∼103∼103 at a fluence of ∼1015protons/cm2. The currents also fluctuated unstably at these fluences but this unstable behavior was not observed after a few months. Intrinsic defects may have been induced by particle irradiation and some of them annealed through a relaxation process. Under electron irradiation, the dark currents did not show a notable increase even with the fluence of ∼1016electrons/cm2.
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Authors
S. Narita, T. Hitora, E. Yamaguchi, Y. Sakemi, M. Itoh, H. Yoshida, J. Kasagi, K. Neichi,