| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1823421 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2013 | 5 Pages |
Abstract
We report on experimental results and TCAD simulations addressing the impact of layout on the electrical characteristics of double-sided 3D diodes fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. Simulations are found to accurately reproduce the device characteristics, thus explaining the basic mechanisms governing the breakdown behavior and capacitance of different devices and providing useful hints for layout optimization.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
M. Povoli, A. Bagolini, M. Boscardin, G.-F. Dalla Betta, G. Giacomini, F. Mattedi, E. Vianello, N. Zorzi,