| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1823512 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2012 | 9 Pages |
Abstract
A new method of modeling of the current signal induced by charged particle in silicon detectors is presented. The approach is based on the Ramo-Shockley theorem for which the charge carrier velocities are determined by taking into account not only the external electric field generated by the electrodes but also the Coulomb interaction between the electron and hole clouds as well as their diffusion.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Z. Sosin,