| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1823593 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2012 | 5 Pages |
Abstract
Charge transfer inefficiency and dark current effects are compared for e2v Technologies plc p-channel and n-channel CCDs, both irradiated with protons. The p-channel devices, prior to their irradiation, exhibited twice the dark current and considerable worse charge transfer inefficiency (CTI) than a typical n-channel. The radiation induced increase in dark current was found to be comparable with n-channel CCDs, and its temperature dependence suggest that the divacancy is the dominant source of thermally generated dark current pre- and post-irradiation. The factor of improvement in tolerance to radiation induced CTI varied by between 15 and 25 for serial CTI and 8 and 3 for parallel CTI, between â70 °C and â110 °C, respectively.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Jason P.D. Gow, Neil J. Murray, Andrew D. Holland, David Burt, Peter J. Pool,