Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1823757 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2012 | 6 Pages |
Abstract
The current gain degradation in silicon bipolar junction transistors (BJTs) is examined under the irradiation with heavy ions. To characterize the radiation damage of the BJTs, the ionizing dose Di and displacement dose Dd verse the chip depth in the BJTs have been calculated for heavy ions. Based on the irradiation testing and calculation results, an approach to evaluate the equivalence of displacement damage in silicon BJTs is given, which could optimize the non-ionizing energy loss (NIEL) methodology and normalize the displacement damage caused by heavy ions.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Chaoming Liu, Xingji Li, Hongbin Geng, Erming Rui, Lixin Guo, Jianqun Yang, Liyi Xiao,