Computational models of germanium point contact detectors

In the crystal bulk of group IV covalent semiconductors such as germanium (Ge), simple analytic models for the valence band structure can provide fast, accurate computations of hole mobility for moderate energy ranges up to a few eV. On the surfaces of these materials, such as on Ge-vacuum or Ge–GeO2 interfaces, the transport rates differ significantly from the bulk. This can be problematic for both point contact and segmented Ge gamma ray detectors, that require accurate carrier drift rates for computing signal basis sets, which themselves are necessary for the precise determination of gamma-ray induced compton scattering events. While several techniques exist for computing surface hole mobilities, more often than not, these methods are complex to implement, require significant computational resources, and lack the simplicity of bulk models for interpreting results. This paper presents a new technique for computing Ge surface hole mobility that can give a first estimate for the surface transport rates after tuning a physically based computational parameter. This model is used in conjunction with particle-in-cell (PIC) simulations for modeling hole-dynamics inside a Ge p-type point contact detector. The results of our calculations agree with experimental data gathered from Ge p-type point contact detectors at Oak Ridge National Laboratory.