| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1824129 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2012 | 4 Pages |
Abstract
Different α-HgI2 seed layers were prepared by vertical deposition method through varying reactive solution concentrations. Polycrystalline α-HgI2 films were grown on the α-HgI2 seed layer by the hot wall vapor phase deposition (HWPVD) method. The orientation along the (001) direction and compactness of the polycrystalline α-HgI2 films are significantly enhanced as compared to that without a seed layer. The polycrystalline α-HgI2 films grown on a three-deposit seed layer show improved electrical properties.
Related Topics
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Authors
Lei Ma, Weiguang Yang, Yali Wang, Gonglong Liu, Liangliang Chen, Ke Tang, Linjun Wang, Weimin Shi,