Progresses in the pulse shape identification with silicon detectors within the FAZIA Collaboration

In the last few years the FAZIA [1] collaboration has been investigating the properties of silicon detectors – in particular the crystal orientation and resistivity non-uniformity – in order to better pin down the detector characteristics that influence their performances for particle identification using ΔE−EΔE−E and Pulse Shape Analysis (PSA) techniques. In this paper we present the first particle identification results obtained with detectors selected for good resistivity uniformity and using a “non-channeled” configuration. A new digital electronics was also designed for the R&D phase of FAZIA and was tested under beam for the first time. A quantitative procedure to measure the observed performances is applied in order to quantify the particle identification thresholds. Particle identification thresholds of ∼2.5AMeV for Z∼3–10Z∼3–10 have been reached with the studied reaction.