First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM

Article ID	Journal	Published Year	Pages	File Type
1824511	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment	2011	4 Pages	PDF

Abstract

In this paper we review on radiation tolerance studies on a Monolithic Pixels Detector fabricated in a commercial Silicon On Insulator (SOI) technology and we report on the first application of Ion Electron Emission Microscopy to obtain a micrometric map of its sensitivity to Single Event Upset.

Keywords

Monolithic Pixel Sensors Single Event Upset Ion Electron Emission Microscopy

Related Topics

Physical Sciences and Engineering Physics and Astronomy Instrumentation

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First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM

Authors

S. Mattiazzo, D. Bisello, P. Giubilato, A. Kaminsky, D. Pantano, L. Silvestrin, M. Tessaro, J. Wyss,