| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1824639 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2011 | 4 Pages |
In this present work we have grown Cd0.9Zn0.1Te doped with indium by the traveling heater method (THM) technique. Large 2 in diameter CZT ingots of more than 1 kg each were successfully grown by the THM technique in vertical configuration. In order to evaluate our as-grown CZT samples, charge transport characteristics were studied at and below room temperature. The key parameter investigated for as-grown CZT samples was the mobility–trapping time product and its temperature variation. Mobility–trapping time values as high as 9×10−3 cm2/V at 30 °C were measured for samples exhibiting resistivities in the 1–2×1010 Ω cm range. The as-grown samples showed moderately good resolution of 1.5–3.5% at 662 keV when fabricated. The variation of the internal electric field along the depth of the detector was studied for as-grown material to evaluate deformations inside the crystal due to the presence of residual stress or other defects.
