Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1825181 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2011 | 6 Pages |
Abstract
A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based on a 0.2 μm CMOS fully depleted (FD-)SOI technology. The SOI wafer is composed of a thick, high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light, charged particles and X-rays for these detectors.For further improvement on the performance of the pixel detector, we have introduced a new process technique called buried p-well (BPW) to suppress back gate effect. We are also developing vertical (3D) integration technology to achieve much higher density.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Y. Arai, T. Miyoshi, Y. Unno, T. Tsuboyama, S. Terada, Y. Ikegami, R. Ichimiya, T. Kohriki, K. Tauchi, Y. Ikemoto, Y. Fujita, T. Uchida, K. Hara, H. Miyake, M. Kochiyama, T. Sega, K. Hanagaki, M. Hirose, J. Uchida, Y. Onuki, Y. Horii, H. Yamamoto,