Optimization of surface structures in n-in-p silicon sensors using TCAD simulation

In order to develop a novel n-in-p radiation-tolerant silicon microstrip sensor with a p-stop structure, surface structures are systematically analyzed for variations in the width, position, and multiplicity of p-stops. With the help of technology CAD (TCAD) simulation, three dynamics are quantitatively investigated: the dependence of the electric potential of the p-stops on the width of the p-stops, the similarity between the electric potential of multiple p-stops, which therefore function more like a single large p-stop, and the correlation between the electric potential of the p-stops and the electric field strength in various configurations. The understanding of the electric potential of p-stops and the maximum electric field strength provides a guideline for reducing the electric field at the implant edges and thus for designing a p-stop structure for very-high-voltage operation.